A geophysical multidisciplinary approach to investigate the shallow subsoil structures in volcanic environment: The case of Ischia Island

Abstract

The ability to image the underground structures of volcanoes is limited by the precision, resolution and pene tration depth of each single geophysical method. In order to improve the knowledge of specific volcanic edifices and to better understand the general behavior of structures, the use of a combination of methods is strongly recommended to exploit and maximize their complementary capabilities of resolution and penetration depths. In this work a large dataset of seismic and electromagnetic measurements has been used to provide a more detailed and improved geophysical image of the shallower portion of the northern sector of Ischia Island(Campania region, Italy), severely hit by the August 21, 2017 earthquake (Mw 3.9). We analysed data by using different methodologies: Horizontal-to-Vertical Spectral Ratio (HVSR), seismic array technique (f k),polarization analysis and Time Domain ElectroMagnetic (TDEM) survey. These methods are sensitive in a different way to tectonic features, lithologies, layer geometry and fluid distribution. Thus, their combination is useful for studying sites with complex crustal structures such as Ischia island, which is characterized by a well-developed geothermal system linked to the presence of a shallow magmatic body. Results of our study provides detailed information of the physical properties of the subsoil through: 1) the spatial distribution of the amplification parameters of ground motion, showing frequency peaks below 1 Hz and/or between 1 Hz and 5 Hz; 2) the definition of the velocity models up to 600 m depth, with shear wave velocities ranging from 150 m/s for the shallower layers to 2500 m/s for the half space; 3) the recognition of the correlation between the principal fault structures and polarization directions of the noise wavefield, mostly oriented along EW and NE-SW directions; 4) the resistivity models of the first 80 m depth with high resistivity values of the shallow layers in the range 50–100 Ω.m and low resistivity values of the bottom layers in the range 1–10 Ω.m.