Please use this identifier to cite or link to this item: http://hdl.handle.net/2122/14312
Authors: Puliafito, Vito* 
De Rose, Raffaele* 
Crupi, Felice* 
Chiappini, Stefano* 
Finocchio, Giovanni* 
Lanuzza, Marco* 
Carpentieri, Mario* 
Title: Impact of Scaling on Physical Unclonable Function Based on Spin–Orbit Torque
Journal: IEEE Magnetics Letters 
Series/Report no.: /11 (2020)
Publisher: IEEE
Issue Date: 2020
DOI: 10.1109/LMAG.2020.3025263
Keywords: Spin electronics
physical unclonable function
spin–orbit torque
micromagnetics
CMOS/spintronic circuit
Subject Classification03.01. General 
Abstract: We analyze the scalability of a spin–orbit torque random access memory (SOT-MRAM)-based physical unclonable function (PUF) at the nanoscale size by means of a hybrid CMOS/spintronics simulation framework. The properties of the SOT-MRAM device (diameters from 100 nm down to 25 nm) are computed via micromagnetic simulations, whereas their implications for PUF applications are evaluated at the circuit level in terms of energy characteristics and security metrics. Obtained results prove that the implementation of 2 b xor operations in the designed PUF circuit achieves randomness and uniqueness very close to the ideality.
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