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http://hdl.handle.net/2122/13396| Authors: | Sciuto, Antonella* Meli, Alessandro* Calcagno, Lucia* Di Franco, Salvatore* Mazzillo, Massimo* Franzo, Giorgia* Albergo, Sebastiano* Tricomi, Alessia* Longo, D.* Giudice, Gaetano* D'Arrigo, Giuseppe* |
Title: | Large area SiC-UV phothodiode for spectroscopy portable system | Journal: | IEEE Sensors Journal | Series/Report no.: | 8/19 (2019) | Issue Date: | Jan-2019 | DOI: | 10.1109/JSEN.2019.2891833 | Abstract: | In this work, we present the extensive characterization of large area Silicon Carbide based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit dark current density of 0.12 nA/cm2 @ 15 V, a 0.12 A/W responsivity @ 300 nm, optimal visible blindness and switching time of ~ 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C. |
| Appears in Collections: | Article published / in press |
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| 2.64-Large area SiC-UV phothodiode_IEEE sens. journal.pdf | 704.65 kB | Adobe PDF |
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