Large area SiC-UV phothodiode for spectroscopy portable system

In this work, we present the extensive characterization of large area Silicon Carbide based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit dark current density of 0.12 nA/cm2 @ 15 V, a 0.12 A/W responsivity @ 300 nm, optimal visible blindness and switching time of ~ 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 °C to 90 °C.